▎ 摘　　要

NOVELTY - The method involves forming a lower electrode, and forming patterns on the lower electrode to form a graphene layer. Industrial reaction ion etching oxidization and remote plasma oxidization treatment are performed to the graphene layer to form a graphene oxide layer and an upper electrode. The formation of the graphene layer involves chemical vapor deposition. Methane gas and argon gas are input, and a material provided is heated to 950-1100 degrees centigrade and reduced to room temperature when performing the chemical vapor deposition. USE - Preparation method for resistor-type memory. ADVANTAGE - The method is compatible to a preparation technique of a semiconductor plane, so that the method meets the large-scale industrial production demand and achieves low preparation cost. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of a resistor-type memory preparation method. '(Drawing includes non-English language text)'