▎ 摘　　要

NOVELTY - The photodetector has a first N-type epitaxial buffer layer, an N-type epitaxial absorption layer, a second N-type epitaxial multiplication layer and a P-type ohmic contact layer sequentially arranged in a substrate. A multilayer graphene transparent electrode layer is formed in a surface of a P-type ohmic contact layer by using electrothermal decomposition process. An N-type ohmic contact electrode is arranged in a back side of the substrate. A pad window is arranged on a silicon oxide protective passivation layer, where the pad window is etched by a photolithography process to prepare a pad of a graphene transparent electrode layer. USE - Graphene transparent electrode integrated silicon carbide silicon avalanche photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene transparent electrode integrated silicon carbide silicon avalanche photodetector.