▎ 摘　　要

NOVELTY - The graphene electronic device (200) has a pair of metals (222,224) that is provided on a substrate (210). The metals are separated from each other. A graphene channel layer (230) is extended between and on the metals. A source electrode (242) and a drain electrode (244) are provided on both edges of the graphene channel layer. A gate oxide layer (250) is formed to cover the graphene channel layer between the source electrode and the drain electrode. A gate electrode (260) is provided on the graphene channel layer between the source electrode and the drain electrode. USE - Graphene electronic device such as FET. ADVANTAGE - Since the metal protection layer is formed on graphene layer when the metal catalyst layer formed under the graphene layer is wet etched, the direct contact between the photoresist pattern and the graphene layer may be prevented or impeded. Thus the damage to graphene by the photoresist remaining when the photoresist pattern is removed can be prevented or impeded. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of fabricating graphene electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the structure of graphene electronic device. Graphene electronic device (200) Substrate (210) Metals (222,224) Graphene channel layer (230) Source electrode (242) Drain electrode (244) Gate oxide layer (250) Gate electrode (260)