▎ 摘　　要

NOVELTY - Synthesizing a graphene sheet (15) on a platinum silicide, comprises forming a stack by depositing a layer (C1) (12) of diffusion barrier material on a substrate (11), depositing a layer (C2) of a carbonaceous material on the layer (C1), depositing a layer (C3) (14) of platinum on the layer (C2) and optionally depositing a layer (C4) of a material on the layer (C3), and thermally treating the stack, where: the carbonaceous material comprises silicon; and a ratio of number of platinum atoms present in layer (C3) and number of silicon atoms present in layer (C2) or (C4) is greater than or equal to 2. USE - The process is useful for synthesizing a graphene sheet on a platinum silicide, where the sheet is useful in a structure that is useful in the fabrication of a micro- or nano-electronic or micro- or nano-electromechanic device (all claimed) such as a complementary metal oxide semiconductor. ADVANTAGE - The process is capable of rapidly synthesizing the high quality graphene sheet on the platinum silicide thus enhancing mobility, stability and mechanical properties of the micro- or nano- electronic or micro- or nano- electromechanic device. DETAILED DESCRIPTION - Synthesizing a graphene sheet (15) on a platinum silicide of formula (PtxSi), comprises forming a stack by depositing a layer (C1) (12) of diffusion barrier material on a substrate (11), depositing a layer (C2) of a carbonaceous material on the layer (C1), depositing a layer (C3) (14) of platinum on the layer (C2) and optionally depositing a layer (C4) of a material having a structure of formula (SiaCbHc) on the layer (C3), and thermally treating the stack, where: the carbonaceous material comprises silicon; and a ratio of number of platinum atoms present in the layer (C3) and number of silicon atoms present in the layer (C2) or layer (C4) is greater than or equal to 2. x = greater than or equal to 2; a = positive number; and b = zero or positive numbers. An INDEPENDENT CLAIM is included for a structure comprising the substrate, the layer (C1) of diffusion barrier material, the platinum silicide, where silicide is present in the form of layers or pads spaced from each other, and the graphene sheet. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a process for synthesizing graphene sheet on platinum silicide. Substrate (11) Layer of diffusion barrier material (12) Layer of carbon material (13) Platinum layer (14) Graphene sheet. (15)