▎ 摘　　要

NOVELTY - A graphene field effect transistor preparing method involves transferring a graphene material on a substrate, preparing a source electrode and a drain electrode on the graphene material, performing a photolithography to form graphene strips on the graphene material at channel region, depositing a high dielectric constant medium on the graphene strips followed by applying the high dielectric constant medium as a mask to the graphene strips, and forming graphene nanobelts on the electrode to obtain product. USE - Method for preparing graphene field effect transistor. ADVANTAGE - The transistor has high switching ratio, and can be prepared in simple and cost effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene field effect transistor prepared by the method.