• 专利标题:   Manufacture of graphene formed on substrate for e.g. electronic device, involves heating solid solution containing carbon dissolved in a metal, obtaining solid solution layer, removing metal and growing graphene on substrate.
  • 专利号:   WO2012118023-A1, JP5152945-B2, KR2013126993-A, IN201302627-P2, US2013341792-A1, EP2682366-A1, CN103429530-A, KR1396419-B1, JP2012525791-X, US8772181-B2, CN103429530-B, EP2682366-B1, EP2682366-A4, IN294595-B
  • 发明人:   NODA SUGURU, TAKANO SOICHIRO, NODA S, TAKANO S
  • 专利权人:   JAPAN SCI TECHNOLOGY AGENCY, JAPAN SCI TECHNOLOGY AGENCY, JAPAN SCI TECHNOLOGY AGENCY, JAPAN SCI TECHNOLOGY AGENCY, JAPAN SCI TECHNOLOGY AGENCY
  • 国际专利分类:   C01B031/02, H01L029/786, H01L021/285, H01L029/43, H01L021/469, H01L029/08, B82Y030/00, B82Y040/00, C01B031/04, H01L029/66
  • 专利详细信息:   WO2012118023-A1 07 Sep 2012 C01B-031/02 201260 Pages: 86 Japanese
  • 申请详细信息:   WO2012118023-A1 WOJP054810 27 Feb 2012
  • 优先权号:   JP042781, KR725330

▎ 摘  要

NOVELTY - A solid solution containing carbon dissolved in a metal is heated to a solid solution temperature, to obtain a solid solution layer (505) formed on a substrate (103). The metal is removed from the solid solution layer while the solid solution is heated at the solid solution temperature and graphene (102) is grown on the substrate. USE - Manufacture of graphene formed on substrate (claimed). Uses include but are not limited to electronic device, semiconductor element, electronic circuit, electric circuit, liquid crystal display, touch screen, solar cell, semiconductor integrated circuit, flexible integrated circuit, electrode, terminal, electron between source, field effect transistor, insulator and conductor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene formed on substrate, which has substrate in which graphene is formed by contacting the surface of the substrate directly. The crystal grain diameter parallel to the surface of the graphene formed on substrate in direction (A) is larger than the crystal grain diameter in other direction parallel to the surface of the graphene formed on substrate. The crystal grain diameter in the direction (A) of the graphene formed on substrate is larger than the crystal grain diameter in a direction perpendicular to the surface of the graphene. DESCRIPTION OF DRAWING(S) - The drawing shows sectional view explaining manufacture of graphene device. Graphene (102) Substrate (103) Solid solution layer (505)