▎ 摘　　要

NOVELTY - The outermost surface layer of graphene sheet-type material (40) is removed or modified and the electrical property of graphene sheet-type material is changed, by irradiating vacuum UV ray (36) to the surface of material in an atmosphere containing active substance included in mixed gas (34). The graphene sheet contained in the material is controlled by removing the sheet from surface side one by one to desired number of layers. The active substance diluted with inert gas is contained in the atmosphere. USE - Method for processing graphene sheet type-material used for semiconductor integrated circuit device. ADVANTAGE - The graphene sheet can be removed from the graphene sheet type-material one by one, thus the graphene sheet type-material having graphene sheet of desired number of layers can be formed easily. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene sheet type-material processing apparatus has an activation response container (12) including a gas inlet tube (18) and a gas outlet port (20) arranged facing a stage for mounting a substrate to be processed. The mixed gas containing active substance is supplied towards the substrate through the inlet tube. A xenon excimer UV lamp (16) for irradiating UV ray is provided in the ceiling of the response container. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the graphene sheet type-material processing apparatus. Activation response container (12) Xenon excimer UV lamp (16) Gas inlet tube (18) Outlet port (20) Mixed gas (34) UV ray (36) Graphene sheet-type material (40) Shielding board (42)