▎ 摘　　要

NOVELTY - The detector has a dielectric substrate (1), and multiple detection units arranged on the dielectric substrate and arranged in a row-column matrix manner. Each of the detecting units comprises a gallium oxide electrode (5), a gallium oxide layer (2), a two-dimensional metal material layer (3) and a two-dimensional metal material electrode. The top surface of two-dimensional metal material layer is provided with a graphene layer (4). The gallium oxide layer is a beta-Ga2O3 single crystal film. The two-dimensional metal type material layer is single crystal or polycrystalline film. The part of two-dimensional metal type material electrode covers the top surface of the graphene layer, and forms an ohmic contact with the graphene layer and the two-dimensional metal type material layer. The top surface of dielectric substrate, gallium oxide electrode, gallium oxide layer, graphene layer and two-dimensional metal type material electrode is covered with a dielectric passivation layer. USE - Used as Ga2O3-2D metal type van der Waals heterojunction wide band polarization photoelectric detector. ADVANTAGE - The detector has large dark current, low polarization sensitivity, no design consideration in deep ultraviolet polarization field and wide band detection range application. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of Gallium(III) trioxide (Ga2O3)-two-dimensional metal type van der Waals heterojunction wide band polarization photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the Ga2O3-2D metal type van der Waals heterojunction wide band polarization photoelectric detector. 1Dielectric substrate 2Gallium oxide layer 3Two-dimensional metal material layer 4Graphene layer 5Gallium oxide electrode