▎ 摘　　要

NOVELTY - Preparation of nitride light-emitting device involves (i) preparing bottom distributed Bragg reflector (DBR) layer (01) on a substrate (00), (ii) forming two-dimensional material buffer layer (02), (iii) growing a low-temperature gallium nitride nucleating layer (03) and a gallium nitride buffer layer (04) on the two-dimensional material buffer layer, (iv) providing an epitaxial resonant cavity LED main structure on gallium nitride buffer layer, (v) forming a high resistance region (08), (vi) forming a step region, (vii) preparing a top DBR layer (10) on the middle area of the metal oxide transparent conductive layer, and defining the pattern, (viii) arranging a p-electrode (12) on the metal oxide transparent conductive layer on two sides of the top DBR layer, and arranging an n-electrode (11) on the step region, and (ix) depositing an insulating layer (13) on a surface of the nitride light-emitting device, and photo-etching. USE - Preparation of nitride light-emitting device for high-brightness display, biological, medical, cosmetic, industrial processing, criminal investigation and communication applications. ADVANTAGE - The method is simpler than the existing technology, and provides nitride light-emitting device having improved light extraction efficiency due to use of DBR layer. The metal oxide transparent conductive layer can realize transverse current expansion in the high resistance region of the nitride light-emitting device, so as to improve the light transmission rate of the device. DETAILED DESCRIPTION - Preparation of nitride light-emitting device involves (i) preparing a bottom distributed Bragg reflector (DBR) layer (01) on a substrate (00), (ii) covering the DBR layer with a single-layer or multilayer two-dimensional material film to form a two-dimensional material buffer layer (02), (iii) growing a low-temperature gallium nitride nucleating layer (03) and a gallium nitride buffer layer (04) in order on the two-dimensional material buffer layer, (iv) providing an epitaxial resonant cavity LED (RCLED) main structure on the gallium nitride buffer layer, and comprising an n-gallium nitride layer (05), a multi-quantum well light-emitting layer (06) and a p-gallium nitride layer (07) in order from bottom to top, (v) performing boron ion implantation on the p-gallium nitride layer to form a high resistance region (08), and evaporating a metal oxide transparent conductive layer (09) on the p-gallium nitride layer, (vi) etching the two sides of the metal oxide transparent conductive layer to the n-gallium nitride layer to form a step region, (vii) preparing a top DBR layer (10) on the middle area of the metal oxide transparent conductive layer, and defining the pattern by photo-etching as the light outlet, (viii) arranging a p-electrode (12) on the metal oxide transparent conductive layer on two sides of the top DBR layer, and arranging an n-electrode (11) on the step region, and (ix) depositing an insulating layer (13) on a surface of the nitride light-emitting device, photo-etching to remove portion of the insulating layer and expose the light outlet, p-electrode and n-electrode, and finishing the preparation. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of nitride light-emitting device. 10Top distributed Bragg reflector layer 11N-electrode 12P-electrode 13Insulating layer 00Substrate 01Bottom distributed Bragg reflector layer 02Two-dimensional material buffer layer 03Low-temperature gallium nitride nucleating layer 04Gallium nitride buffer layer 05N-gallium nitride layer 06Multi-quantum well light emitting layer 07P-gallium nitride layer 08High resistance region 09Metal oxide transparent conductive layer