• 专利标题:   Production of high-speed stirred bead porous graphene comprises mixing polyvinylpyrrolidone powder, graphene dry powder and silicon dioxide microsphere dry powder, mixing with deionized water, and dipping hydrofluoric acid solution.
  • 专利号:   CN104556011-A, CN104556011-B
  • 发明人:   LIU H, SUN L, WANG C, ZHANG Y, CANG L
  • 专利权人:   UNIV HEILONGJIANG
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104556011-A 29 Apr 2015 C01B-031/04 201558 Pages: 8 Chinese
  • 申请详细信息:   CN104556011-A CN10001514 04 Jan 2015
  • 优先权号:   CN10001514

▎ 摘  要

NOVELTY - Production of high-speed stirred bead porous graphene comprises mixing polyvinylpyrrolidone powder, graphene dry powder and silicon dioxide microsphere dry powder, mixing mixed powder and deionized water, and obtaining composite suspension; adding dimethyl silicone oil containing polypropylene, heating in microwave oven at 80-90 degrees C, magnetically stirring, and curing; and heating polyvinylpyrrolidone/oxidation graphene/silicon dioxide composite microsphere, curing under nitrogen condition and dipping hydrofluoric acid solution. USE - Method for producing high-speed stirred bead porous graphene (claimed). DETAILED DESCRIPTION - Production of high-speed stirred bead porous graphene comprises: (A) mixing polyvinylpyrrolidone powder, graphene dry powder and silicon dioxide microsphere dry powder, mixing mixed powder and deionized water, and obtaining composite suspension, at ratio of polyvinylpyrrolidone powder and graphene dry powder of 1:0.2-0.3, polyvinylpyrrolidone powder and silicon dioxide microsphere dry powder of 1:0.5-1, and mixture of powder and deionized water of 1:25-30; (B) adding dimethyl silicone oil containing polypropylene, heating in microwave oven at 80-90 degrees C, magnetically stirring at 400-600 revolutions/minute for 2-3 hours, curing, and standing precipitate for 12-24 hours at room temperature; (C) heating polyvinylpyrrolidone/oxidation graphene/silicon dioxide composite microsphere at 80-100 degrees C for 2-3 hours, heating at 150 degrees C for 1-12 hours, heating for 1.5-2 hours at 280 degrees C, curing under nitrogen condition at 750-850 degrees C, sintering 1.5-2 hours, and obtaining graphene/silicon dioxide composite microsphere; and (D) dipping 8% hydrofluoric acid solution, soaking for 2-3 hours, drying, and obtaining porous graphene.