▎ 摘　　要

NOVELTY - The device has a photosensitive organic thin film transistor provided with a gate electrode, a dielectric layer and a source electrode. A drain electrode and an organic semiconductor layer are connected with each other. A photodiode is connected with a diode anode, a hole transport layer, an active layer, an electron transport layer and the diode cathode. Second packaging layer covers a function sensing structure. The photo-sensitive organic film transistor is provided with an N-gallium nitride (N-GaN) layer and multi-quantum well layer that are arranged in a vertical manner perpendicular to a substrate. USE - Micro-LED-based on-chip sensing integrated device. ADVANTAGE - The micro-LED-based on-chip sensing integrated device solves the problems of high preparation cost, low yield and low production efficiency caused by the traditional LED chip huge transfer and bonding process. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the micro-LED-based on-chip sensing integrated device. Substrate (100) Micro-led chip (200) First packaging layer (300) Functional sensing structure (400) Second packaging layer (500)