• 专利标题:   Microstructure device e.g. integrated circuit device of semiconductor device, has intermediate heat transfer layer which is positioned between surface of substrate and microstructure device chip and is provided with graphene flakes.
  • 专利号:   US2014287239-A1
  • 发明人:   SCURATI M G, CERIATI L, BENINI L
  • 专利权人:   STMICROELECTRONICS SRL
  • 国际专利分类:   B29C065/48, B29C065/54, H01L023/373
  • 专利详细信息:   US2014287239-A1 25 Sep 2014 H01L-023/373 201470 Pages: 17 English
  • 申请详细信息:   US2014287239-A1 US215597 17 Mar 2014
  • 优先权号:   ITVI0077

▎ 摘  要

NOVELTY - The device (250) has a substrate (210) with a surface (210A) and a microstructure device chip (220) is positioned above the surface to form circuit element. An intermediate heat transfer layer (260) is positioned between surface of substrate and microstructure device chip and is provided with graphene flakes. The heat transfer layer is provided with a glue substance so as to mechanically connect microstructure device chip to substrate. The concentration in atomic percent of carbon atoms of graphene flakes is greater than concentration of silver atoms and/or lead atoms. USE - Microstructure device such as integrated circuit of semiconductor device. ADVANTAGE - The superior thermal conductivity of graphene is efficiently exploited. Since pronounced layer internal heat distribution is achieved. The heat energy is transported from microstructure device chip to the entire lead frame efficiently. Thus exhibits superior lateral or in-plane thermal conductivity, hence achieving a fast and efficient lateral distribution of heat across the entire substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for driving microstructure device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the microstructure device. Substrate (210) Surface (210A) Chip (220) Microstructure device (250) Heat transfer layer (260)