• 专利标题:   Controlling double-layer graphene stacking angle, comprises using copper foil or copper-nickel alloy foil as growth substrate, chemical vapor deposition method, directly preparing double-layer corner graphene and single-layer graphene.
  • 专利号:   CN112919454-A
  • 发明人:   HAO Y, ZHANG M, WU N
  • 专利权人:   UNIV NANJING
  • 国际专利分类:   C01B032/186, C01B032/194
  • 专利详细信息:   CN112919454-A 08 Jun 2021 C01B-032/186 202158 Pages: 8 Chinese
  • 申请详细信息:   CN112919454-A CN10125454 29 Jan 2021
  • 优先权号:   CN10125454

▎ 摘  要

NOVELTY - Controlling double-layer graphene stacking angle, comprises using chemical vapor deposition method, using copper foil or copper-nickel alloy foil as growth substrate, directly preparing double-layer corner graphene and regular hexagonal single-layer graphene, and the rotating angle of the double-layer corner graphene is 0-50, and 200-300. USE - The method is useful for controlling double-layer graphene stacking angle.