▎ 摘　　要

NOVELTY - High electron mobility transistor (HEMT) chip of silicon carbide-based graphene material comprises a substrate, a graphene layer, an ion implantation region, an S/D electrode region and a G electrode. The graphene layer is located above the substrate and connected with the substrate. The ion implantation region is located at the inner center of the substrate and penetrates upward to the upper surface of the graphene layer. The S/D electrode region is located above the graphene layer and connected with the graphene layer. The G electrode is located above the ion implantation region and connected with the ion implantation region. USE - The HEMT chip of silicon carbide-based graphene material is useful in semiconductor electronic information field. ADVANTAGE - The chip: uses graphene material as conductive channel to replace the traditional heterogeneous interface 2DEG, realize the ultra-high speed electron migration and conductive rate; adopts the Schottky barrier of metal semiconductor contact grid power supply to control the switch of the whole transistor; and can integrating the growth of different materials through the semiconductor process and forms a transistor with excellent characteristics. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of high electron mobility transistor chip of silicon carbide-based graphene material. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the high electron mobility transistor chip of silicon carbide-based graphene material.