▎ 摘　　要

NOVELTY - The two-dimensional structure sensor includes a transistor (2) that is formed with a substrate, which is formed with a source region (6) and a drain region (8). A channel region (10) is positioned in between the source region and the drain region. A reference electrode (14) is positioned on the same plane as the transistor. The reference electrode is formed with the graphene, to which fluorine atoms are bonded. The reference electrode is positioned above or below the channel region, and is spaced apart from the surface of the channel region by a predetermined interval. USE - Two-dimensional structure sensor for an ion sensitive field-effect transistor. ADVANTAGE - Efficiently provides the micro-sized high-sensitivity sensor, and hence ensures efficient usage of the two-dimensional structure sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a two-dimensional structure sensor. Transistor (2) Source region (6) Drain region (8) Channel region (10) Reference electrode (14)