▎ 摘　　要

NOVELTY - A graphene structure (1) comprises substrate (2) and graphene nano ribbon (5) which is formed on the substrate and has width of less than or equal to 100 nm as prohibition body width as a semiconductor produces. USE - A graphene structure for semiconductor device (claimed). ADVANTAGE - Growth position and growth direction of graphene nano ribbon onto substrate is perfectly controllable, thus, integration of graphene nano ribbon transistor is attained. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) semiconductor devices comprising graphene structure (1); and (2) manufacture of graphene structure which involves forming insulating film (7) on the substrate (2), forming metal layer on insulating film, forming pattern of graphene structure which consists of metal layer, raising temperature of substrate to predetermined temperature, producing plasma discharge which consists of source gas of graphene nano ribbon and cooling the substrate to predetermined temperature. DESCRIPTION OF DRAWING(S) - The drawings show a top view and sectional view of the graphene structure. Graphene structure (1) Substrate (2) 1st electrode (3) 2nd electrode (4) Graphene nano ribbon (5) Insulating film (7)