▎ 摘　　要

NOVELTY - The method involves preparing a stacked structure of an insulating dielectric layer/conductive layer. A graphene film is transferred onto the insulating dielectric layer, or directly growing the graphene film on the insulating dielectric layer, and patterned with a photoresist. A drain and source electrode is prepared. The source and drain electrodes are stacked in two layers of a metal/oxide layer, or a three-layer stack structure of a first metal/second metal/oxide layer. The electrode is configured for directly contacting the graphene film with a metal material. The graphene film is covered with a metal, metal oxide or organic material to form a graphene frequency multiplier. The oxide layer is a discontinuous or porous metal formed by oxidation of aluminum, titanium, nickel or niobium. USE - Method for preparing single-gate graphene frequency multiplier used in electronic circuits, and micro-nanoelectronics. ADVANTAGE - The proportion of the energy of all output alternating current (AC) signals is high. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic views of the graphene frequency multiplier. Metal layer (2) Oxidation layer (3) Graphene (5) Gate dielectric (6) Gate electrode (7)