▎ 摘 要
NOVELTY - The modulator has P-type silicon substrate (3), manganese-zinc ferrite thin film (2) and graphene layer (1) are overlapped with a source terminal (4), drain terminal (5) and a gate terminal (6) respectively. The manganese-zinc ferrite thin film is prepared by sputtering method. The thickness of the manganese-zinc ferrite thin film is 200 to 500 nm. USE - Terahertz wave modulator based on manganese-zinc ferrite thin film. ADVANTAGE - The manganese-zinc ferrite thin film has high saturation magnetization and low coercivity is used as an intermediate layer, and has wide modulation frequency and high transmittance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of terahertz wave modulator based on manganese-zinc ferrite thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the terahertz wave modulator based on manganese-zinc ferrite thin film. Graphene layer (1) Manganese-zinc ferrite thin film (2) P-type silicon substrate (3) Source terminal (4) Drain terminal (5) Gate terminal (6)