1. 平台首页
  2. 国际专利信息
  • 专利标题:   Terahertz wave modulator based on manganese-zinc (MnZn) ferrite thin film, has P-type silicon substrate, manganese-zinc ferrite thin film and graphene layer are overlapped with source terminal, drain terminal and gate terminal.
  • 专利号:   CN106405976-A
  • 发明人:   LIAO Y, ZHANG D, WANG X, ZHANG H, YANG Q, WEN T, ZHONG Z
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   C04B035/38, C04B035/622, G02F001/015, G02F001/355
  • 专利详细信息:   CN106405976-A 15 Feb 2017 G02F-001/355 201718 Pages: 10 Chinese
  • 申请详细信息:   CN106405976-A CN10896751 14 Oct 2016
  • 优先权号:   CN10896751

▎ 摘　　要

NOVELTY - The modulator has P-type silicon substrate (3), manganese-zinc ferrite thin film (2) and graphene layer (1) are overlapped with a source terminal (4), drain terminal (5) and a gate terminal (6) respectively. The manganese-zinc ferrite thin film is prepared by sputtering method. The thickness of the manganese-zinc ferrite thin film is 200 to 500 nm. USE - Terahertz wave modulator based on manganese-zinc ferrite thin film. ADVANTAGE - The manganese-zinc ferrite thin film has high saturation magnetization and low coercivity is used as an intermediate layer, and has wide modulation frequency and high transmittance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of terahertz wave modulator based on manganese-zinc ferrite thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the terahertz wave modulator based on manganese-zinc ferrite thin film. Graphene layer (1) Manganese-zinc ferrite thin film (2) P-type silicon substrate (3) Source terminal (4) Drain terminal (5) Gate terminal (6)