▎ 摘　　要

NOVELTY - The quantum dot LED has an anode, a cathode and a quantum dot light emitting layer arranged between the anode and the cathode. A hole function layer is arranged between the anode and the quantum dot light emitting layer. The hole function layer is provided with a tunnel junction structure based on hexagonal boron nitride material. The hole function layer is provided with a laminated n-type semiconductor material layer, a p-type semiconductor material layer and a hexagonal boron nitride material layer located between the n-type semiconductor material layer and the p-type semiconductor material layer. The n-type semiconductor material layer, hexagonal boron nitride material layer and p-type semiconductor material layer are arranged to form a tunnel junction structure. USE - Quantum dot LED used in display device. ADVANTAGE - The hexagonal boron nitride material improves the current expansion efficiency in the tunneling junction structure and increases the tunneling probability of the hole. The hole function layer of the tunneling junction structure based on hexagonal boron nitride material improves the hole mobility, so as to improve the hole injection efficiency of the device, and finally improve the luminous performance of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of quantum dot LED. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the hole function layer of the quantum dot LED. (Drawing includes non-English language text)