• 专利标题:   Multilayer film for use graphene device comprises target substrate having first surface patterned graphene film attached to first surface, patterned substrate layer attached to second surface, and substrate layer that growth substrate of graphene film.
  • 专利号:   CN114229838-A, CN114229838-B
  • 发明人:   XU Z, WANG Y, WANG H, LIU J
  • 专利权人:   SONGSHAN LAKE MATERIALS LAB, CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   C01B032/194
  • 专利详细信息:   CN114229838-A 25 Mar 2022 C01B-032/194 202239 Chinese
  • 申请详细信息:   CN114229838-A CN11619204 27 Dec 2021
  • 优先权号:   CN11619204

▎ 摘  要

NOVELTY - Multilayer film comprises a target substrate with a first surface that is provided with a patterned graphene film. A patterned substrate layer is attached to the first surface. A second surface of the graphene film is connected with a second surface. The second surface is connected to the second surface, and the substrate layer forms a growth substrate of the graphite film. The graphite layer is made of silicon carbide. USE - Multilayer film for use a graphene device. Uses include but are not limited to integrated circuit, field effect transistor, radio frequency device and sensor field. ADVANTAGE - The film: can improve the efficiency of the preparation process of the graphene-based device; can simplify the operation; and does not peeling off the growth substrate. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for : (1) An application of the multilayer film; and (2) A manufacturing method of multi-layer film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the obtained layered product corresponding to each step in the process.