▎ 摘　　要

NOVELTY - Controlling nucleation preparation large area single-crystal graphene device comprises a chemical vapor deposition reaction chamber, a reaction gas management system, an exhaust gas management system and a heat source. The top part of the chemical vapor deposition reaction chamber is set with a reaction gas entrance pipe and bottom is set with a discharge pipe. The reaction gas management system is connected with the reaction gas entrance pipe. The discharge management system is connected with the discharge pipe. The nucleation controller comprises a quartz tube. USE - Used as controlling nucleation preparation large area single-crystal graphene device. DETAILED DESCRIPTION - Controlling nucleation preparation large area single-crystal graphene device comprises a chemical vapor deposition reaction chamber, a reaction gas management system, an exhaust gas management system and a heat source. The top part of the chemical vapor deposition reaction chamber is set with a reaction gas entrance pipe and bottom is set with a discharge pipe. The reaction gas management system is connected with the reaction gas entrance pipe. The discharge management system is connected with the discharge pipe. The heat source and the chemical vapor deposition reaction chamber are set with the chemical vapor deposition reaction chamber for heating. The bottom of the chemical vapor deposition reaction chamber is provided with a base plate support and top part is provided with a nucleation controller. The nucleation controller is connected with the entrance pipe hanging above the supporting base plate. The nucleation controller comprises a quartz tube connected to form a quartz plate. The quartz tube is connected with the gas reacting entrance pipe. The center of the quartz plate is provided with a core hole. An INDEPENDENT CLAIM is also included for preparation of controlling nucleation preparation large area single-crystal graphene device comprising (i) taking substrate into the chemical vapor deposition reaction chamber for support and vacuuming, (ii) introducing hydrogen gas at a rate of 10-100 sccm, (iii) heating to 400-1050 degrees C for 1-60 minutes and maintaining the hydrogen flow rate, (iv) reducing flow rate of hydrogen to less than 10 sccm, introducing methane gas at a flow rate of 0.1-1 sccm and maintaining pressure of 1-10 mTorr for 1-120 seconds, (v) increasing flow rate of methane gas for 0.1-1 sccm and maintaining pressure of 1-1 Torr for 1-20 hours, and (vi) reducing flow rate of methane gas to less than 10 sccm, cooling to room temperature and removing substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the controlling nucleation preparation large area single-crystal graphene device.