▎ 摘　　要

NOVELTY - The infrared detector has quantum dot LEDs. A graphene infrared absorption layer (7) is arranged between an electronic transmission layer (6) and the cathode (8) of the quantum dot LED. The graphene infrared absorption layer is respectively coupled with the electronic transmission layer and the cathode. The graphene infrared absorption layer is provided with multiple graphene layers (9), and a barrier layer (10) is arranged between each graphene layers. The barrier layer material is provided as molybdenum disulfide. The electronic transmission layer is provided as a zinc oxide layer. The material of the carrier blocking layer is provided as molybdenum trioxide. USE - Infrared detector based on graphene and quantum dots. ADVANTAGE - The external circuit of the infrared detector is greatly simplified. The volume of the detector is reduced. The requirement for the incident angle of the infrared radiation is avoided and great photocurrent gain is achieved. The conversion efficiency is higher. The graphene has good thermal stability, so that the whole infrared detector does not need refrigeration. DESCRIPTION OF DRAWING(S) - The drawing shows a structural diagram of the infrared detector. Electronic transmission layer (6) Graphene infrared absorption layer (7) Cathode of the quantum dot LED (8) Graphene layers (9) Barrier layer (10)