▎ 摘　　要

NOVELTY - Preparation of graphene comprises cleaning silicon carbide (SiC) substrate to remove impurities on surface, performing plasma-enhanced chemical vapor deposition (PECVD) to deposit silicon dioxide (SiO2) photoresist mask layer, carving device of the substrate with the same shape of window image of mask layer, setting on quartz tube, introducing argon (Ar) gas and chlorine gas (Cl2) to the quartz tube to produce carbon film, placing carbon film in hydrofluoric acid buffer solution, performing physical vapor deposition (PVD) to plate copper (Cu) film on carbon film and annealing. USE - The graphene is used for manufacturing high-mobility graphene transistor. ADVANTAGE - The method is simple and safe. DETAILED DESCRIPTION - Preparation of graphene comprises: (A) cleaning SiC substrate to remove impurities on surface and performing PECVD to deposit 0.5-1.0 mu m of SiO2 photoresist mask layer; (B) carving device of the substrate with the same shape of window image of mask layer to expose SiC; (C) setting on quartz tube and heating to 700-1100 degrees C; (D) introducing Ar gas and Cl2 gas to the quartz tube for 4-10 minutes to produce carbon film; (E) placing carbon film in hydrofluoric acid buffer solution to remove pattern other than SiO2; (F) performing PVD to plate 200-300 nanometers of Cu film on carbon film; (G) annealing plated Cu film at 900-1200?C for 15-25 minutes under protection of Ar gas to produce patterned graphene; and (H) placing in ferric chloride solution to remove Cu film.