• 专利标题:   Love wave based icing sensor, has metal packaging pipe shell whose packaging pipe cap is formed with opening at corresponding position of PDMS water storage cavity, and permeable membrane set at opening of metal packaging pipe shell.
  • 专利号:   CN116068048-A
  • 发明人:   LIANG Y, ZHANG Y, CHENG L, YIN Y, WANG W
  • 专利权人:   INST ACOUSTICS CHINESE ACAD SCI
  • 国际专利分类:   G01N029/04, G01N029/24
  • 专利详细信息:   CN116068048-A 05 May 2023 G01N-029/04 202347 Chinese
  • 申请详细信息:   CN116068048-A CN11273231 29 Oct 2021
  • 优先权号:   CN11273231

▎ 摘  要

NOVELTY - The sensor has a silicide-containing protective layer (5) formed above a waveguide layer (2). The silicide-containing protective layer is formed between an input transducer (3) and an output transducer (4). A middle portion of the silicide-containing protective layer is formed with an opening. A periphery edge of a polydimethylsiloxane (PDMS) chip microfluidic is bonded with the silicide-containing protective layer. A lower edge of a chip package fence is bonded with the waveguide layer. An upper edge of the chip package fence is bonded with a packaging tube cap of a metal package pipe shell (7). A packaging pipe cap of the metal packaging pipe shell is formed with an opening at corresponding position of a PDMS water storage cavity (6). A permeable membrane (8) i.e. oxidation graphene gas permeable membrane or a polyvinyl alcohol chitosan composite permeable membrane is set at the opening of the metal packaging pipe shell. USE - Love wave based icing sensor. ADVANTAGE - The wave icing sensor improves temperature stability of the device by depositing the SU-8 opposite to determine the temperature coefficient polarity on the surface of the piezoelectric substrate. The sensor element increases tightness of the sensor element, and avoids the damage to the water caused by the sensor piece. The chip package fence packaged the polydimethylsiloxane (PDMS) chip microfluidic and the chip to form the PDMS water storage cavity, and realizes the storage of water, and prevents the electrode short circuit caused by water leakage. The sensor implements the photoetching technology, and coats the silicon-containing compound thin layer (5) on the transmission path, which is convenient to bond with the water storage cavities so as to prevent water leakage to the surrounding interdigital electrode in an effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a love wave based icing sensor system. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a principle structure of an ice sensor. 1Piezoelectric substrate 2Waveguide layer 3Input transducer 4Output transducer 5Silicon-containing protective layer 6Pdms water storage cavity 7Metal package pipe shell 8Permeable membrane 10Signal distributor 11Phase discriminator 12Ad converter 13Data collector 31Corresponding interdigital pair 32Aluminium reflecting electrode