▎ 摘　　要

NOVELTY - Defective graphene-based memristor (100) (I), comprises: a first electrode (110); a defective graphene structure adjacent to the first electrode; a memristive material (140) adjacent the defective graphene structure comprising many ions; a second electrode (120) adjacent the memristive material; and a voltage source that generates an electric field between the first and the second electrodes, where the ions in the memristive material, under the influence of the electric field, form an ion conducting channel between the second electrode and the defective graphene structure. USE - The defective graphene-based memristor is useful in nanoelectronic memories, computer logic and neuromorphic computer architectures. ADVANTAGE - The defective graphene-based memristor utilizes the defective graphene layer, which: comprises the nanopores that enable the memristor to operated at a lower current, thus creating corresponding lower heat load in the memristor, leading to low power consumption, which is desirable for highly dense nanoscale memristor applications; and presents very high barrier to the mobility of ions, and establishes the ion conduction paths below the engineered defects so that paths for electrons between two electrodes of the memristor can be established, and the ion conduction path will remain even when power is removed from the memristor, thus enabling the memristor to maintain its on state (or off state) even when power is removed. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a defective nanoscale graphene-based memristor, comprising: a first electrode; a second electrode electrically coupled to the first electrode through a voltage source; a defective graphene layer adjacent the first electrode and comprising at least one engineered nanopore (160); and a memristive material interspersed between the defective graphene layer and the second electrode, where the memristive material includes ions, and the application of a voltage using the voltage source causes the ions to form the conducting channel between the nanopores and second electrode, and the defective nanoscale graphene-based memristor is switched from a first state to a second state; and (2) a defective graphene-based memristor (II), comprising: the first electrode; the second electrode; a means for applying a switching potential to the first and the second electrodes; and a means for switching the graphene memristor from an off state to an on state, where the graphene memristor remains in a most recent one of the off state or the on state when the potential is removed from it. DESCRIPTION OF DRAWING(S) - The figure shows the structure and operation of the graphene-based memristor. Memristor (100) First electrode (110) Second electrode (120) Memristive material (140) Nanopore (160)