▎ 摘　　要

NOVELTY - Method of forming graphene layer (GL10) involves forming 1st graphene (GP10) on 1st region of underlayer (UL10) at 1st temperature using 1st source gas and forming 2nd graphene (GP20) on 2nd region adjacent to 1st region of underlayer at 2nd temperature using 2nd source gas, in which one of the 1st graphene and 2nd graphene is P-type graphene, the other one of the 1st graphene and 2nd graphene is N-type graphene, and the 1st graphene and the 2nd graphene together form a P-N junction. USE - Method of forming graphene layer for producing graphene-containing device e.g. diode, transistor, tunneling device, binary junction transistor (BJT), barristor, FET, memory device, solar cell, photodetector, sensor, and light-emitting device (all claimed). ADVANTAGE - Graphene layer with excellent physical properties and characteristics can be manufactured. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) method of manufacturing graphene-containing device which involves forming graphene layer comprising P-N junction and forming portion of graphene-containing device in which portion comprises graphene layer; (2) graphene layer comprising P-type graphene and N-type graphene joined to side of P-type graphene in which depletion region is formed at interface between P-type graphene and N-type graphene and has width of less than or equal to 5 nm, preferably less than or equal to 2 nm; and (3) graphene-containing device comprising the graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a step in the method of forming graphene layer. Graphene layer (GL10) 1st graphene (GP10) 2nd graphene (GP20) Substrate (SUB10) Underlayer (UL10)