• 专利标题:   Preparation of boron-doped graphene nanobelt involves etching metallic substrate using diluted acid solution, heating, passing metallic substrate surface into methane, ethane, propane, acetylene, or ethanol, passing light, and reacting.
  • 专利号:   CN103879988-A
  • 发明人:   WANG Y, YUAN X, ZHONG H, ZHOU M
  • 专利权人:   OCEANS KING LIGHTING SCI TECHNOLOGY CO, SHENZHEN OCEANS KING LIGHTING ENG CO LTD, SHENZHEN OCEANS KING LIGHTING SCI TECH
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B031/04
  • 专利详细信息:   CN103879988-A 25 Jun 2014 C01B-031/04 201457 Pages: 15 Chinese
  • 申请详细信息:   CN103879988-A CN10555649 20 Dec 2012
  • 优先权号:   CN10555649

▎ 摘  要

NOVELTY - Boron-doped graphene nanobelt is prepared by etching metallic substrate (S110) using diluted acid solution, heating (S120) at 600-900 degrees C under anaerobic and 1st protective gas atmosphere, passing metallic substrate surface into methane, ethane, propane, acetylene, or ethanol under UV light radiation, passing light through catalytic chemical vapor deposition, reacting for 30-300 minutes to obtain carbon nano wall in metallic substrate surface (S130), cooling at room temperature under 1st protective gas atmosphere, and scraping carbon nano wall to obtain carbon nano wall powder (S140). USE - Preparation of boron-doped graphene nanobelt (claimed). ADVANTAGE - Process has mild reaction condition, and product has relatively low temperature, larger interlayer distance, and uniformed size. DETAILED DESCRIPTION - Boron-doped graphene nanobelt is prepared by etching metallic substrate (S110) using diluted acid solution, heating (S120) at 600-900 degrees C under anaerobic and 1st protective gas atmosphere, passing metallic substrate surface into methane, ethane, propane, acetylene, or ethanol under UV light radiation, passing light through catalytic chemical vapor deposition, reacting for 30-300 minutes to obtain carbon nano wall in metallic substrate surface (S130), cooling at room temperature under 1st protective gas atmosphere, scraping carbon nano wall to obtain carbon nano wall powder (S140), adding concentrated sulfuric acid and potassium permanganate at 0 degrees C to obtain 1st mixture, stirring at less than or equal to 10 degrees C for 2 hours, mixing at room temperature for 24 hours under water bath condition, adding deionized water under ice bath condition, reacting for 15 minutes to obtain reaction solution, adding hydrogen peroxide solution, filtering, washing to obtain carbon dioxide nano wall slurry (S150), mixing carbon nano wall slurry and boric acid or diboron trioxide with mass ratio of 1:0.01-0.5 to obtain 2nd mixture, and drying (S160) at 500-1000 degrees C for 10-300 minutes under 2nd protective gas atmosphere in which solid-to-liquid ratio carbon nano wall powder:potassium permanganate:concentrated sulfuric acid is 1 g:3 g:23 ml, and volume ratio concentrated sulfuric acid:deionized water:hydrogen peroxide solution is 1.15:4.6:14. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart for preparation of boron-doped graphene nanobelt. (Drawing includes non-English language text). Etching metallic substrate (S110) Heating (S120) Obtain carbon nano wall in metallic substrate surface (S130) Obtain carbon nano wall powder (S140) Obtain carbon dioxide nano wall slurry (S150) Drying (S160)