▎ 摘　　要

NOVELTY - Manufacture of graphene involves controlling electrical characteristics by doping nitrogen to graphene. USE - Manufacture of graphene used for graphene conducting wire, graphene channel layer and graphene charge trapping layer for semiconductor device e.g. memory, transistor, sensor element, radiant heat element and heat-generation element (all claimed). ADVANTAGE - The method efficiently and economically provides graphene. The semiconductor device using the graphene has high electrical characteristics and chipping resistance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) semiconductor device, which comprises substrate, N-doped graphene, and electrode layer formed on the substrate; and (2) fabrication of semiconductor device.