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  • 专利标题:   Manufacture of n-type graphene quantum dot involves mixing graphene quantum dot and nitrogen-containing compound, and heat-treating mixture.
  • 专利号:   KR2015078108-A, KR1556584-B1
  • 发明人:   CHOI S H, SHIN D H, KIM S
  • 专利权人:   UNIV KYUNGHEE IND COOP
  • 国际专利分类:   C01B031/04, C09K011/65
  • 专利详细信息:   KR2015078108-A 08 Jul 2015 C09K-011/65 201558 Pages: 17
  • 申请详细信息:   KR2015078108-A KR167218 30 Dec 2013
  • 优先权号:   KR167218

▎ 摘　　要

NOVELTY - Manufacture of n-type graphene quantum dot involves mixing graphene quantum dot and nitrogen-containing compound, and heat-treating the mixture. USE - Manufacture of n-type graphene quantum dot (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for n-type graphene quantum dot.