▎ 摘　　要

NOVELTY - The preparation of low-resistance graphene film by corona process involves subjecting target substrate to corona treatment, laminating the film with graphene on the graphene-grown metal substrate to obtain film/graphene/metal substrate structure, removing metal substrate to obtain film/graphene structure, laminating film/graphene structure with corona treated target substrate, removing the film to obtain structure of graphene/target substrate. USE - Preparation of low-resistance graphene film by corona process (claimed). ADVANTAGE - The method enables preparation of low-resistance graphene film, reduces single-layer graphene film side resistance and reduces resistivity of monolayer graphene film after pretreatment of the target substrate.