▎ 摘　　要

NOVELTY - Preparing copper/graphene composite material involves using acetone, ethanol and de-ionized water for washing rolled copper foil, ultrasonic cleaning rolled copper foil with 15-25% of hydrochloric acid, and then cleaning copper foil by ethanol ultrasonic. The copper foil is processed by polishing to prepare graphene film on surface of copper foil using chemical vapor deposition method. The treated rolled copper foil is placed in the central region of the tube furnace with argon and 300 standard cubic centimeter per minute hydrogen. USE - Method for preparing copper/graphene composite material. ADVANTAGE - The method enables to prepare copper/graphene composite material is is convenient to operate, has good application prospect, and in simple and cost effective manner. DETAILED DESCRIPTION - Preparing copper/graphene composite material involves using acetone, ethanol and de-ionized water for washing rolled copper foil, ultrasonic cleaning rolled copper foil with 15-25% of hydrochloric acid, and then cleaning copper foil by ethanol ultrasonic. The copper foil is processed by polishing to prepare graphene film on surface of copper foil using chemical vapor deposition method. The treated rolled copper foil is placed in the central region of the tube furnace with argon and 300 standard cubic centimeter per minute hydrogen. The copper foil is heated to 900-1000 degrees C with 10 degrees C/minutes under atmosphere of 3000 standard cubic centimeter per minute. The temperature is maintained for 0.5-1 hours. The graphene growth stage is carried out at 900-1000 degrees C, filled mixed gas of argon gas and ethylene. The flow rate is 10-20 standard cubic centimeter per minute for 30-50 seconds. The 30-50 standard cubic centimeter per minute of hydrogen and 3000-4000 standard cubic centimeter per minute argon gas is used. The furnace is cooled to room temperature to obtain graphene film. The magnetron sputtering coating apparatus is used for coating copper film on silicon dioxide/silicon sheet with layer thickness of 400-700 nanometer. The copper film/silicon dioxide/silicon sample is subjected to magnetron sputtering coating with front working air pressure of 5x 10-6 pascal. The target distance is 50 mm. The sputtering power is 150 Watts. The flow rate of argon is 50 standard cubic centimeter per minute. The deposition pressure is 0.5 pascal. The background vacuum pressure is 2x 10-3 pascal. The sputtering time is 15 minutes. The graphene film is subjected to etch substrate transferring method to copper film/silicon dioxide/silicon sample. The polymethyl methacrylate is added with anisole solution to obtain 40-50 mg/mL of mixed solution, ultrasonic dissolve uniformly, graphene of copper foil is added in spin coating machine. The polymethyl methacrylate layer are uniformly coated with layer of thickness of 0.5-1.0 mm on surface with low speed and high speed. The low speed is 60-3000 radian per minute. The polymethyl methacrylate glue copper foil is heated at 140-170 degrees C for 3-7 minutes. The polymethyl methacrylate is immersed in 1 g/ml culture dish for ferric chloride corrosion solution for 8-10 hours. The copper foil is dissolved in polymethyl acrylic acid methyl ester/graphene on surface of solution. The de-ionized water is used to wash polymethyl methacrylate/graphene film. The copper film/silicon dioxide/silicon substrate is placed in culture dish, and filled with deionized water. The copper film/silicon dioxide/silicon substrate is placed in deionized water. The polymethyl methacrylate/flat graphene is fetched to surface, an aqueous solution is naturally dried. The polymethyl methacrylate/graphene/silicon dioxide/silicon substrate is placed in drying box at 140-1700 degrees C for 40-70 minutes. The anisole or acetone is used to remove polymethyl methacrylate film, and then dried to obtain sample of graphene/silicon dioxide/silicon substrate. The sputtering layer of 450-550 nanometer copper film surface of graphene film/silicon dioxide/silicon sample to obtain copper film/graphene film/silicon dioxide/silicon sample, then transferring and sputtering copper film to obtain final product.