▎ 摘　　要

NOVELTY - Performing low-temperature direct growth method of multilayer graphene involves forming an etch stopper on a substrate, forming a seed layer on the etch stopper, where seed layer is selected from amorphous boron, boron nitride, boron carbon nitride, boron carbide, or Me-X, where Me is selected from silicon, titanium, molybdenum, or zirconium, and X is selected from boron, carbon, or nitrogen, forming a metal catalyst layer on the seed layer, forming an amorphous carbon layer on the metal catalyst layer, and growing multilayer graphene on the seed layer through interlayer exchange directly between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450-600℃. USE - Method for performing low-temperature direct growth method of multilayer graphene used for manufacturing a pellicle for extreme ultraviolet lithography (claimed). ADVANTAGE - The method enables to grow multilayer graphene that has excellent thermal stability, mechanical stability, chemical durability, and high extreme ultraviolet (UV) transmittance, and provides pellicle for extreme UV lithography, which has high degree of semiconductor integration, and prevents the material of the metal catalyst layer from being diffused into the silicon substrate, and minimizes defects through free control of thickness, physical properties, and chemical composition. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method for manufacturing a pellicle for extreme ultraviolet lithography by using a low-temperature direct growth method of multilayer graphene, which involves: (a) forming a core layer by directly growing multilayer graphene on a substrate at a low temperature; (b) forming a capping layer on the core layer; and (c) forming an opening for partially exposing the core layer by removing a central portion of the substrate under the core layer, where forming the core layer involves forming an etch stopper on the substrate, forming a seed layer on the etch stopper, forming a metal catalyst layer on the seed layer, forming an amorphous carbon layer on the metal catalyst layer, growing the multilayer graphene directly on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450-600℃, and removing the metal catalyst layer on the multilayer graphene; and (2) a pellicle for extreme ultraviolet lithography, which comrprises substrate having an opening formed in a central portion, etch stopper formed on the substrate to cover the opening, seed layer formed on the etch stopper, core layer formed of directly grown multilayer graphene on the seed layer, and capping layer formed on the core layer.