▎ 摘　　要

NOVELTY - The device (50) has an insulation film (52) formed on a substrate. A conductive film is formed on the insulation film and contains a fine catalytic metal particle (55) as a junction and graphene (56A, 56B) extending in a network form from the junction. The graphene in the conductive film is separated from the insulation film by a gap. The fine catalytic metal particle is prepared from a metal film formed on the insulation film by plasma treatment. The conductive film is used in a channel region and as a transparent electrode. USE - Semiconductor device such as multi-layered structure device i.e. LSI, and photoelectric conversion device. ADVANTAGE - The graphene can be prevented from being adversely affected by external factors due to small percentage of the graphene contained in a region. The device has high mobility when the graphene is used as the channel region for carrying current in a transistor. The transparent electrode has high current property and high light transmission when patterns of catalytic metal portions and the bonding portions are optimized. The transparent electrode can be used in a flexible display due to the graphene including high mechanical strength and high bending property. DETAILED DESCRIPTION - The embedded portion contains metal or compound selected from titanium (Ti), titanium nitride (TiN) and tantalum nitride (TaN). DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a semiconductor device. Semiconductor device (50) Photoelectric conversion layer (51) Insulation film (52) Fine catalytic metal particle (55) Graphene (56A, 56B)