• 专利标题:   Reversely transferring graphene comprises e.g. providing graphene grown on metal substrate, spin-coating first colloid on first surface of graphene to form first colloidal graphene-metal substrate structure, and sticking tape on first gel.
  • 专利号:   CN111422860-A
  • 发明人:   CHEN Z, YU G, ZHANG Y, SUI Y, LIANG Y, HU S, LI J, KANG H, WANG S
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B032/194
  • 专利详细信息:   CN111422860-A 17 Jul 2020 C01B-032/194 202063 Pages: 14 Chinese
  • 申请详细信息:   CN111422860-A CN10137684 02 Mar 2020
  • 优先权号:   CN10137684

▎ 摘  要

NOVELTY - Reversely transferring graphene comprises e.g. providing graphene grown on metal substrate, and spin-coating first colloid on first surface of the graphene to form a first colloidal graphene-metal substrate structure, where the first surface is far away from the surface of the metal substrate, sticking tape on first gel to form a tape-first gel-graphene-metal substrate structure, removing metal substrate by etching to form a tape-first colloid-graphene structure, spin-coating a second colloid on the second surface of the graphene to form a tape-first colloid-graphene second colloid structure, where the second surface is opposite to the first surface, and the second colloid is opposite to the first colloid cannot be dissolving in same solvent, placing tape-first colloid-graphene-second colloidal structure into a first dissolving agent, and after dissolving first colloid, a graphene-second colloidal structure is forming, using target substrate to lift graphene-second colloidal structure. USE - The method is useful for reversely transferring graphene. ADVANTAGE - The method: is simple, has convenient operation, strong operability and practical value. DETAILED DESCRIPTION - Reversely transferring graphene comprises providing graphene grown on metal substrate, and spin-coating first colloid on first surface of the graphene to form a first colloidal graphene-metal substrate structure, where the first surface is far away from the surface of the metal substrate, sticking tape on the first gel to form a tape-first gel-graphene-metal substrate structure, removing metal substrate by etching to form a tape-first colloid-graphene structure, spin-coating a second colloid on the second surface of the graphene to form a tape-first colloid-graphene second colloid structure, where the second surface is opposite to the first surface, and the second colloid is opposite to the first colloid cannot be dissolving in same solvent, placing tape-first colloid-graphene-second colloidal structure into a first dissolving agent, and after dissolving first colloid, a graphene-second colloidal structure is forming, using target substrate to lift graphene-second colloidal structure to form the target substrate-graphene-second colloidal structure, placing target substrate-graphene-second colloidal structure into a second dissolving agent, dissolving second colloid forming target substrate-graphene structure, thus transferring graphene to mentioned target substrate.