▎ 摘　　要

NOVELTY - The method of manufacturing an electronic device (100) involves: preparing a substrate (110) including a channel element (115); depositing a carbon layer (130) on the channel element, where the carbon layer has sp2bonding structure; depositing a ferroelectric layer (140) on the carbon layer; depositing a gate electrode (150) on the ferroelectric layer; and crystallizing the ferroelectric layer through an annealing process. USE - Method of manufacturing an electronic device such as a logic device or a memory device. ADVANTAGE - Since the carbon layer having a sp2bonding structure is provided between the ferroelectric layer and the substrate, the carbon layer having a sp2bonding structure may limit and/or prevent diffusion of metal or oxygen in the ferroelectric layer into the substrate in a high-temperature annealing process. As such, current leakage may be limited and/or prevented and formation of an undesired silicon oxide layer or silicide is also be limited and/or prevented. In addition, since the diffusion limitation and/or prevention effect may be achievable even when the carbon layer having a sp2 bonding structure may have a small thickness of about 1 nm, a total thickness of the electronic device may be reduced. Thus, the electronic device can be easily scaled down. The insulating layer may serve to suppress or prevent electrical leakage and may also be used for capacitance matching in a gate stack structure. The carbon layer having an sp2 bonding structure may have a high charge density and thus may increase uniformity in characteristics of the electronic device. The carbon layer including nanocrystalline graphene provide a high adhesive force to the ferroelectric layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an electronic device. 100Electronic device 110Substrate 115Channel element 121Source 122Drain 130Carbon layer 140Ferroelectric layer 150Gate electrode