▎ 摘　　要

NOVELTY - Preparation of self-contained ion-glue film gated graphene FET involves (1) obtaining a silicon substrate, and preparing metal electrodes on the silicon substrate; (2) adhering a screened graphene sample on polyvinyl alcohol (PVA), and transferring the graphene sample on PVA to the metal electrode using a two-dimensional material transfer platform to obtain a graphene FET device; and (3) forming an ionic liquid gel film on the graphene FET device by shear transfer. USE - Preparation of self-contained ion-glue film gated graphene FET used in large-scale integrated circuit. ADVANTAGE - The method reduces the negative influence of the traditional complex operation to the surface of the sample graphene, and effectively improves the preparation efficiency and success rate of graphene FET.