▎ 摘　　要

NOVELTY - The preparation method of semiconductor-type sulfur-doped graphene film involves (1) adding 30 ml ethylene glycol and 6 ml sulfuric acid into 100 ml beaker, heating with stirring at 200 degrees C until the mixed solution becomes brown and no longer continues to discolor, filtering the brown solution, removing the black carbonate precipitate, leaving the solution still, (2) spin-coating the sulfur-doped graphene precursor solution on treated quartz sheet at 1250-2500 rpm, (3) baking the film spin-coated on quartz wafer substrate and annealing. USE - Preparation of semiconductor-type sulfur-doped graphene film used for photodetector. ADVANTAGE - The method enables preparation of semiconductor-type sulfur-doped graphene film with excellent photoelectric and light-emitting modulation properties. DETAILED DESCRIPTION - The preparation method of semiconductor-type sulfur-doped graphene film involves (1) adding 30 ml ethylene glycol and 6 ml sulfuric acid into 100 ml beaker, heating with stirring at 200 degrees C until the mixed solution becomes brown and no longer continues to discolor, filtering the brown solution, removing the black carbonate precipitate, leaving the solution still, (2) spin-coating the sulfur-doped graphene precursor solution on treated quartz sheet at 1250-2500 rpm, (3) baking the film spin-coated on quartz wafer substrate at 80 degrees C for 20 minutes and annealing at 650 degrees C for 3 hours.