• 专利标题:   Preparation of semiconductor-type sulfur-doped graphene film used for photodetector, involves mixing ethylene glycol and sulfuric acid, heating until mixed solution becomes brown, filtering brown solution and spin-coating.
  • 专利号:   CN106587023-A, CN106587023-B
  • 发明人:   TANG L, JI R, XIANG J, ZHANG Q, YUAN S, ZHAO J, KONG J, ZHENG Y, WEI H, HONG J, TIE X, ZUO D, KANG R, WANG X, WANG Y, HAN F
  • 专利权人:   KUNMING PHYSICS INST
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN106587023-A 26 Apr 2017 C01B-032/184 201733 Pages: 8 Chinese
  • 申请详细信息:   CN106587023-A CN11190375 21 Dec 2016
  • 优先权号:   CN11190375

▎ 摘  要

NOVELTY - The preparation method of semiconductor-type sulfur-doped graphene film involves (1) adding 30 ml ethylene glycol and 6 ml sulfuric acid into 100 ml beaker, heating with stirring at 200 degrees C until the mixed solution becomes brown and no longer continues to discolor, filtering the brown solution, removing the black carbonate precipitate, leaving the solution still, (2) spin-coating the sulfur-doped graphene precursor solution on treated quartz sheet at 1250-2500 rpm, (3) baking the film spin-coated on quartz wafer substrate and annealing. USE - Preparation of semiconductor-type sulfur-doped graphene film used for photodetector. ADVANTAGE - The method enables preparation of semiconductor-type sulfur-doped graphene film with excellent photoelectric and light-emitting modulation properties. DETAILED DESCRIPTION - The preparation method of semiconductor-type sulfur-doped graphene film involves (1) adding 30 ml ethylene glycol and 6 ml sulfuric acid into 100 ml beaker, heating with stirring at 200 degrees C until the mixed solution becomes brown and no longer continues to discolor, filtering the brown solution, removing the black carbonate precipitate, leaving the solution still, (2) spin-coating the sulfur-doped graphene precursor solution on treated quartz sheet at 1250-2500 rpm, (3) baking the film spin-coated on quartz wafer substrate at 80 degrees C for 20 minutes and annealing at 650 degrees C for 3 hours.