• 专利标题:   Producing a doped graphene, used in e.g. auxiliary electrode, comprises forming doped graphene layer, positioning support layer, removing metal layer, adding dopants and positioning substrate layer and then removing support layer.
  • 专利号:   KR2013110765-A, KR1613558-B1
  • 发明人:   RHO J, LEE S, JUNG M, MOON J, SEO B, PARK W
  • 专利权人:   LG ELECTRONICS INC
  • 国际专利分类:   B32B027/34, C01B031/02, C09D177/06
  • 专利详细信息:   KR2013110765-A 10 Oct 2013 C01B-031/02 201403 Pages: 14
  • 申请详细信息:   KR2013110765-A KR032986 30 Mar 2012
  • 优先权号:   KR032986

▎ 摘  要

NOVELTY - Producing a doped graphene comprises forming a doped graphene layer with a catalyst metal layer; positioning a support layer including dopants on the graphene layer; removing the catalytic metal layer; adding dopants to the doped graphene layer; positioning the substrate layer on the doped graphene layer; and removing the support layer. USE - The method is useful for producing a doped graphene (claimed) useful in an auxiliary electrode or a transparent electrode of display devices such as a touch panel display. ADVANTAGE - The dopant is positioned between the graphene layer and the substrate layer so as to avoid the direct exposure of the dopant to the surrounding environment so that the doping effect of the graphene can be enhanced.