• 专利标题:   Transferring and doping graphene involves growing graphene on both sides of substrate, attaching one side of substrate after growing graphene to transition substrate, coating doped adhesive layer on target substrate, and bonding.
  • 专利号:   CN107673327-A
  • 发明人:   YANG Y
  • 专利权人:   FUJIAN XINFENG TWO DIMENSIONAL MATERIAL
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN107673327-A 09 Feb 2018 C01B-032/184 201821 Pages: 8 Chinese
  • 申请详细信息:   CN107673327-A CN10622632 01 Aug 2016
  • 优先权号:   CN10622632

▎ 摘  要

NOVELTY - Transferring and doping graphene involves growing graphene on both sides of substrate, attaching one side of the substrate after growing graphene to the transition substrate, coating the doped adhesive layer on the target substrate, bonding the target substrate coated with a doped adhesive layer on the other side of the growth graphene back substrate, curing the adhesive layer, stripping the substrate and graphene. USE - Method for transferring and doping graphene. ADVANTAGE - The method enables to transfer and dope graphene does not need extra doping graphene, which has good stability, and has excellent adhesion. DETAILED DESCRIPTION - Transferring and doping graphene involves growing graphene on both sides of substrate, attaching one side of the substrate after growing graphene to the transition substrate, coating the doped adhesive layer on the target substrate, bonding the target substrate coated with a doped adhesive layer on the other side of the growth graphene back substrate, curing the adhesive layer, stripping the substrate and graphene. The graphene grown on the target substrate is attached to the graphene grown on the transition substrate, and the transition substrate is removed, and transferred multilayer graphene layer on the target substrate.