▎ 摘　　要

NOVELTY - The vertical power semiconductor device (100) includes a silicon carbide semiconductor structure (102) that comprises a drift zone. An upper contact (108) is provided at side (110) of silicon carbide semiconductor structure. A lower contact (112) is provided at opposite side (114) of the silicon carbide semiconductor structure. A current path (116) is arranged between upper and lower contacts and is provided with a graphene layer (220). USE - Vertical power semiconductor device e.g. insulated gate bipolar transistor (IGBT) (claimed). Can also be used in MOSFET, double-diffused MOSFET (DMOSFET), junction gate FET (JFET), high electron mobility transistor (HEMT), bipolar transistor and power schottky diode. ADVANTAGE - Since current path is provided with graphene layer, the on-resistance of vertical power semiconductor device is improved due to the high mobility and high concentration of free charge carriers within graphene layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for lateral power semiconductor device. DESCRIPTION OF DRAWING(S) - The drawings show the schematic views of the vertical power semiconductor device. Vertical power semiconductor device (100) Silicon carbide semiconductor structure (102) Upper contact (108) Sides (110,114) Lower contact (112) Current path (116) Graphene layer (220)