▎ 摘　　要

NOVELTY - The method involves photoetching a substrate. A device pattern is formed, where the device pattern comprises a first part pattern and a second part pattern, where the connection part between the first part pattern and the second part pattern is in tip shape. A metal catalytic layer is prepared (S102) on the device pattern, where the shape of the metal catalytic layer is the same as that of the device pattern. Graphene is grown on surface of the metal catalytic layer under the preset temperature condition (S103). The tip of the metal catalytic layer is melted to obtain the graphene. USE - Method for preparing a graphene device for a photoelectric detector (claimed). ADVANTAGE - The method enables simultaneously obtaining graphene and electrode so as to obtain the graphene device with excellent photoelectric performance without the transfer process of graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for preparing a graphene device. (Drawing includes non-English language text). S101Step for performing photolithography on substrate to form device pattern S102Step for preparing metal catalytic layer on device pattern S103Step for growing graphene on surface of metal catalytic layer