▎ 摘　　要

NOVELTY - Exciton control device based on two-dimensional transition metal chalcogenide semiconductor comprises a silicon dioxide substrate, an encapsulation layer is arranged on the silicon dioxide substrate, and a metal chalcogenide layer is arranged on the encapsulation layer. The metal chalcogenide layer is provided with a graphene layer. A metal electrode is also prepared on the silicon dioxide substrate. The graphene layer connects the metal electrode and the metal chalcogenide layer. The metal chalcogenides are tungsten diselenide or tungsten diselenide-molybdenum disulfide heterojunctions. USE - Used as exciton control device based on two-dimensional transition metal chalcogenide semiconductor. ADVANTAGE - The method solves the problem of the electron-hole pair in the semiconductor material at room temperature existing in the prior art, i.e., the short exciton transport control distance and the weak fluorescence intensity. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: Manufacturing exciton control device based on two-dimensional transition metal chalcogenide semiconductor; and Controlling exciton control device based on two-dimensional transition metal chalcogenide semiconductor.