• 专利标题:   Preparing carbon materials rich in topological defects by high-temperature ammonia treatment used as catalyst for electrochemical reduction of carbon dioxide, involves using nitrogen-doped carbon material as precursor.
  • 专利号:   CN112830468-A, CN112830468-B
  • 发明人:   CHEN L, DONG Y, SU J, ZHANG Q, YANG Y, WU K, HU J
  • 专利权人:   CHINESE ACAD SCI NINGBO MATERIALS TECHNO, STATE GRID ZHEJIANG ELECTRIC POWER CO, NINGBO POWER SUPPLY CO STATE GRID ZHEJI, NINGBO INST MATERIALS TECHNOLOGY ENG C
  • 国际专利分类:   B01D053/62, B01D053/86, B01J027/24, C01B032/05
  • 专利详细信息:   CN112830468-A 25 May 2021 C01B-032/05 202156 Pages: 13 Chinese
  • 申请详细信息:   CN112830468-A CN11158762 22 Nov 2019
  • 优先权号:   CN11158762

▎ 摘  要

NOVELTY - Preparing carbon materials rich in topological defects by high-temperature ammonia treatment involves using nitrogen-doped carbon material as a precursor, and heat-treating in an ammonia atmosphere to obtain a carbon material rich in carbon topological defects. USE - Method for preparing carbon materials rich in topological defects by high-temperature ammonia treatment used as a catalyst for electrochemical reduction of carbon dioxide (claimed). ADVANTAGE - The method uses nitrogen-doped carbon material as a precursor and heat-treats it in an ammonia atmosphere to obtain a carbon material rich in carbon topological defects. It has high-efficiency carbon dioxide electroreduction catalytic activity, high selectivity to CO, and high stability, so it can be used as a catalyst for electrochemical reduction of carbon dioxide.