▎ 摘　　要

NOVELTY - The device has an insulation layer formed on a substrate. A substrate surface grid is covered with a grid cover. An oxidation layer is formed on a source electrode and a drain electrode, where an end of the drain electrode is formed with a graphene oxide image cover. A through-hole is formed on an upper surface of the insulation layer. An active layer is formed on the substrate. The active layer is made up of graphene. An upper surface of the drain electrode is coated with copper metal material. USE - Graphene oxide based resistance change random storage device. ADVANTAGE - The device increases production efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene oxide based resistance change random storage device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene oxide based resistance change random storage device.