▎ 摘　　要

NOVELTY - The method involves applying (101) a germanium layer (200) to an epitaxially grown monatomically thick carbon layer (201). The carbon layer is arranged on a substrate (202). The substrate is heated (102) to a first temperature (301) and a p-doped graphene layer (203) is produced from the carbon layer. A local doping is carried out by a first local heating up of a first partial region of the p-doped graphene layer to a second temperature. The second temperature is greater than the first temperature and an n-doped graphene layer (204) is produced in the first sub-region (211). USE - Method for performing local doping of graphene layer. ADVANTAGE - The temperature-generating device is comprised with a heatable tip of an atomic force microscope and the temperature-generating device is adapted to carry out the first local heating or the second local heating. The local doping of the graphene layer or the generation of electrically insulating regions can thus be made highly precise. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a device for performing local doping of graphene layer; and (2) a product obtained from the process of performing local doping of graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for performing local doping of graphene layer. (Drawing includes non-English language text) Step for applying germanium layer (101) Step for heating substrate (102) Germanium layer (200) Thick carbon layer (201) Step for arranging carbon layer to substrate (202) P-doped graphene layer (203) N-doped graphene layer (204) First sub-region (211) First temperature (301)