▎ 摘　　要

NOVELTY - The apparatus has an introduction unit for introducing a carbon-containing gas into a deposition chamber (1). A rotatable substrate (2) is provided to grow graphene. A heating element (6) is provided to heat a portion of apparatus. A pump (9) is provided to evacuate a deposition chamber. A harvesting system (7) is provided to collect graphene. The rotatable substrate is included with an endless rotatable surface comprising a material for accepting deposition of a primary carbon layer prior to graphene growth. USE - Apparatus for continuous production of graphene. ADVANTAGE - The energy consumption is achieved. The plasma generation is increased, in order to remove impurities from the rotatable substrate surface. DETAILED DESCRIPTION - The apparatus has a material for deposition of primary carbon layer which comprises a surface of metal. The material for deposition of the primary carbon layer is comprised of a surface of metal alloys. The material for deposition of primary carbon layer comprises a surface of Inconel (RTM: family of austenitic nickel-chromium-based superalloys). The rotatable substrate is a rotatable belt. The carbon-containing gas is a hydrocarbon gas selected from the group of methane, ethane, ethylene, propane, propylene, and acetylene. The carbon-containing gas is a gas selected from the group of hydrogen, oxygen, nitrogen, argon, and helium. The harvesting system is associated with a portion of the surface of the rotatable substrate for removal of the deposited graphene from surface of rotatable substrate. The surface of harvesting system is provided with a brush, an adhesive, a magnetic field, and electric charges for removal of the deposited graphene from the surface of the rotatable substrate. Raman Spectroscopy system (3) is in connection with the deposition chamber. Raman Spectroscopy system is provided to monitor graphene deposition on the substrate. A plasma generator (5) is a microwave radio frequency generator for generating plasma through low-pressure reactant gas discharge. INDEPENDENT CLAIMS are included for the following: (1) a method for continuous production of graphene, which involves providing a clean surface of rotatable substrate. The graphene is continuously grown on rotatable substrate using plasma-enhanced chemical vapor deposition by addition of carbon-containing gas to deposition chamber. The graphene grown on rotatable substrate is continuously harvested by harvesting system. The graphene removed by harvesting system is collected. The primary carbon layer from carbon-containing gas is deposited onto clean surface of rotatable substrate by plasma-enhanced chemical vapor deposition. The surface is etched by cyano radicals. The continuous production of graphene is performed at a pressure within the range of 1 to 1000 mTorr; and (2) a graphene which comprises a distinctive three dimensional structure due to the growth of graphene sheets in random orientation on the surface of the rotatable substrate at angles from 0 to 180 degrees between the plane of the individual sheets of graphene sheet and the plane of surface of rotatable substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the apparatus for continuous production of graphene. Deposition chamber (1) Rotatable substrate (2) Raman Spectroscopy system (3) Plasma generator (5) Heating element (6) Harvesting system (7) Pump (9)