▎ 摘　　要

NOVELTY - Preparing polarized photodetector based on tungsten disulfide/graphene/germanium selenide heterojunction comprises using a mechanical exfoliation method to obtain GeSe thin layer, graphene thin layer and WS2 thin layer respectively, selecting a PVA dry transfer process to transfer the graphene thin layer to the GeSe thin layer to form a GeSe/graphene stack, using a PVA dry transfer process, transferring the WS2 thin layer to the GeSe/graphene stack to form a tungsten disulfide/graphene/germanium selenide heterojunction, and depositing a metal layer to form the first electrode in contact with the thin layer of GeSe and the second electrode in contact with the thin layer of WS2. USE - The method is useful for preparing polarized photodetector based on tungsten disulfide/graphene/germanium selenide heterojunction. ADVANTAGE - The photodetector has anisotropic photocurrent ratio of 3, dynamic light response time of 25 ms, excellent polarization-sensitive light detection performance, and exhibits excellent photovoltaic effect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for polarized photodetector based on tungsten disulfide/graphene/germanium selenide heterojunction.