▎ 摘　　要

NOVELTY - Micro light emitting device comprises a N-type semiconductor material layer is divided into a first N-type semiconductor material layer and a second N-type semiconductor material layer, where a rectangular second N-type semiconductor material layer is distributed in a matrix on the first N-type semiconductor material layer. The second N-type semiconductor material layer is sequentially covered with a multiple quantum well layer and a P-type semiconductor material transport layer. A non-P-type heavily doped semiconductor material transmission layer area on the P-type semiconductor material transmission layer is covered with an insulating confinement layer and the thickness of the insulating confinement layer is the same as that of the semiconductor material transmission layer. The upper surface of the insulating limiting layer and the semiconductor material transmission layer is a current spreading layer and P-type ohmic electrodes are distributed on the current spreading layer. USE - Used as micro light emitting device for inhibiting Shockley-read-hall non-radiation composite. ADVANTAGE - The device achieves better current limiting effect; reduces non-radiative recombination of Shockley-read-hall caused by sidewall defects and improves hole injection efficiency and external quantum efficiency (EQE). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for manufacturing micro light emitting device for inhibiting Shockley-read-hall non-radiation composite.