▎ 摘　　要

NOVELTY - The process involves forming a protruding or mesa structure (210) with a sidewall surface (214) by depositing or growing a material layer on an upper surface (202) of a substrate (200), where the protruding or mesa structure is etched from the substrate by forming a mask over protruding or mesa structure. A device structure is formed in contact with the material layer in a fin FET configuration. A graphene layer (220) is formed on the sidewall surface, where width of the sidewall surface is controlled by controlling the etching process. USE - Process for fabricating a sidewall graphene device. ADVANTAGE - The process enables the sidewall graphene device to be fabricated with accurately formed designed features. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a sidewall graphene device comprising a device structure. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a fin FET with a sidewall graphene layer. Substrate (200) Upper surface (202) Protruding/mesa structure (210) Sidewall surface (214) Graphene layer (220)