▎ 摘　　要

NOVELTY - LED device comprises a substrate (1), multiple core particles (5) connected in parallel and set on the substrate. The P electrode (6) placed on top of multiple core particles. The core particles are sequentially grown with an undoped GaN buffer layer from bottom to top on the substrate, N-gallium nitride (GaN) layer, InGaN/GaN multiple quantum well layer, p-AlGaN electron barrier layer and PGaN layer. The P electrode is arranged on the upper layer of the P-GaN layer of each core particle. The N electrode (4) is annularly arranged on the outer side surface of the N-GaN layer. The N electrodes of multiple core particles are connected by wires, and the wires are further connected with soldering points. USE - The LED device is useful for visible light communication (claimed). ADVANTAGE - The LED device: is formed by connecting multiple LED core particles in parallel, which can effectively improve the light output power; increases the expansion rate of the current at the same time; and makes the current distribution in the LED chip more uniform. DESCRIPTION OF DRAWING(S) - The drawing shows a structural diagram of an LED device for visible light communication. Substrate (1) N electrode (4) Core particle (5) P electrode (6)